High-power pulsed applications increasingly require power supplies capable of high-current bipolar output and flexible controllability. However, achieving high power density while maintaining pulse precision and current-sharing stability remains a significant challenge pulsed source design.

This work aims to design and implement a compact, integrated bipolar pulsed current supply system that utilizes a paralleled silicon carbide (SiC) MOSFET full-bridge architecture to meet the demands of medium-voltage, high-power pulsed applications.

The proposed system integrates the main power stage, isolated drivers, auxiliary power supplies, and protection module on a single printed circuit board (PCB), featuring both high power density and good scalability.

Experimental results demonstrate that, under DC bus voltages ranging from 50 V to 300 V, the peak output current exhibits excellent linear correlation with the bus voltage, while pulse-width adjustment enables continuously controllable peak current with a maximum enhancement of 37%. The system is capable of delivering bipolar pulse currents up to ±300 A, confirming the compatibility of high-current output with compact integration. In addition, at a 500 \mathrm\; ns pulse width, the four-device paralleled branch achieves a current-sharing imbalance factor of 12.87%, validating the effectiveness of the cooperative gate-drive scheme and the use of independent gate resistors.

These findings indicate that the proposed compact integrated design successfully balances high-current bipolar pulsed output and parameter adjustability, providing experimental evidence and design guidance for the miniaturization and engineering implementation of medium-voltage and high-power pulse sources.