Electrothermal coupling numerical simulation of avalanche transistors based on Lattice-Boltzmann Method
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摘要: 雪崩三极管广泛应用于微波器件、脉冲电源等场景。由于其有瞬时大功率的特性，在散热方面存在很大的挑战。雪崩三极管的工作区域在微米级。在微观尺度上，经典的傅里叶热传导定律不再适用，其散热原理与宏观尺度上的散热原理有明显的不同。玻尔兹曼输运方程（BTE）在多个时空尺度上成立，可以描述微观尺度上的热输运现象。本文以声子BTE为控制方程，采用格子-玻尔兹曼方法（Lattice-Boltzmann Method，LBM）进行离散和求解，建立了微尺度下非傅里叶导热过程的介观数值模型。利用该模型模拟了雪崩三极管的加热过程。采用TCAD电热耦合仿真的焦耳热功率结果作为非傅里叶导热模型温度预测的输入条件。用非傅里叶导热模型预测的雪崩三极管峰值最高温度高于传统傅里叶导热模型的结果。Abstract:
Background Avalanche transistors are extensively employed in microwave devices, pulse power supplies, and various other applications. Owing to their capability of generating instantaneous high power, significant thermal management challenges arise. The active region of an avalanche transistor operates at the micrometer scale, where classical Fourier's law of heat conduction becomes inadequate due to the breakdown of phonon diffusive transport assumptions. At such microscopic dimensions, the heat transfer mechanism deviates markedly from that at macroscopic dimensions. The Boltzmann Transport Equation (BTE) of phonon scattering, which remains valid across multiple spatiotemporal scales, provides a robust framework for modeling non-Fourier thermal transport phenomena.Purpose This study aims to propose a new electrothermal coupling method for simulating the working process semiconductor devices, in order to capture the non-Fourier heat conduction effect within semiconductor materials at the micro-nanoscale, where phonon ballistic transport dominates.Methods In this study, the phonon BTE is adopted as the governing equation, and the Lattice-Boltzmann Method (LBM) is employed for spatial and temporal discretization to establish a mesoscopic numerical model of non-Fourier heat conduction at the microscale. This model is applied to simulate the transient thermal behavior of avalanche transistors, with input conditions derived from TCAD-based electrothermal coupling simulations.Results The internal temperature field of the avalanche transistor predicted by the non-Fourier conduction model is higher than that of the traditional Fourier conduction model.Conclusions These findings highlight the importance of incorporating non-Fourier heat conduction effect into the thermal analysis of micro-nano scale devices. -
图 5 过渡层焦耳热功率密度Y轴分布
Figure 5. The Y-axis distribution of Joule heat power density in the transition layer
图 6 过渡层焦耳热功率密度X轴分布
Figure 6. The X-axis distribution of Joule heat power density in the transition layer
图 7 非傅里叶导热峰值温度云图
Figure 7. Contour of peak temperature of non-Fourier heat conduction model
图 8 非傅里叶导热模型与傅里叶导热数值结果对比
Figure 8. Comparisn of non-Fourier heat conduction model and Fourier heat conduction model
表 1 TCAD网格无关性验证
Table 1. Grid independence verification of TCAD
quantity of grids. heat/W 2512 24.1 9113 23.6 34607 23.6 
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表 2 非傅里叶导热模型网格无关性验证
Table 2. Grid independence verification of non-Fourier heat conduction model
quantity of grids. Tmax/K 2093 301.9 8145 301.9 50061 301.9
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