脉冲晶闸管微观接触界面电热特性表征模型与验证

刘毅; 曾臣乾; 李柳霞; 肖诗芸; 林福昌

doi:10.11884/HPLPB202638.250495

脉冲晶闸管微观接触界面电热特性表征模型与验证

doi: 10.11884/HPLPB202638.250495

刘毅^{1, 2,},
曾臣乾¹,
李柳霞^{1, 2, ,},
肖诗芸¹,
林福昌^{1, 2}

1.
强电磁技术全国重点实验室电气与电子工程学院（华中科技大学），武汉 430074
2.
脉冲功率技术教育部重点实验室（华中科技大学），武汉 430074

基金项目: 湖北省杰出青年科学基金项目(2024AFA046)

详细信息

作者简介:
刘　毅，yiliu@hust.edu.cn

通讯作者:
李柳霞，llx@hust.edu.cn。

中图分类号: TM832
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- 文章访问数: 36
- HTML全文浏览量: 17
- PDF下载量: 4
- 被引次数: 0
出版历程
- 收稿日期: 2025-12-30
- 修回日期: 2026-03-16
- 录用日期: 2026-03-12
- 网络出版日期: 2026-04-13

Electrothermal characterization model for the micro-contact interface of pulse thyristors

Liu Yi^{1, 2
,},
Zeng Chenqian¹,
Li Liuxia^{1, 2
, ,},
Xiao Shiyun¹,
Lin Fuchang^{1, 2}

1.
State Key Laboratory of Advanced Electromagnetic Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
2.
Key Laboratory of Pulsed Power Technology (Huazhong University of Science and Technology), Ministry of Education, Wuhan 430074, China

摘要

摘要: 脉冲晶闸管工作在强流脉冲工况，重复的电磁热力联合冲击会导致局部过温造成铝层电熔蚀、进而加速晶闸管热疲劳失效。针对由于接触界面电热效应产生的失效问题，综合考虑表面粗糙度、外施压力、电极图案和载流子扩散等因素，建立了脉冲晶闸管微观接触界面电热特性表征模型，并在脉冲工况下进行了仿真模拟。设计了晶闸管电熔蚀加速老化试验验证仿真的正确性，在重复放电140次时，开关阳极表面外圈出现明显铝层熔蚀现象；当放电次数达到400次时，硅坑在更靠近门极位置出现。试验结果证明了模型对电熔蚀失效规律的预测精度，为脉冲晶闸管电熔蚀失效的定量评估提供了可靠技术支撑。
- 脉冲晶闸管 /
- 电熔蚀 /
- 载流子扩散 /
- 电热特性表征模型 /
- 加速老化试验
Abstract: Background
Pulse thyristors operate under high-current pulse conditions, where repeated combined electromagnetic and thermal stresses cause localised overheating. This leads to electrothermal erosion of the aluminum layer, accelerating thermal fatigue failure of the thyristor.
Purpose
This study aims to establish an electrothermal characterization model to evaluate the electro-erosion effect, thereby providing reliable technical support for the quantitative assessment of pulse thyristor electrical erosion failures.
Methods
A micro-scale contact interface electrothermal characteristic characterization model for pulse thyristors was established. This model comprehensively considers factors such as surface roughness, applied pressure, electrode patterns, and carrier diffusion, and was simulated under pulsed operating conditions. Furthermore, an accelerated aging test for thyristor electro-erosion was designed to validate the simulation's accuracy.
Results
Experimental observations revealed that after 140 repeated discharges, significant aluminum layer erosion appeared on the outer ring of the switch anode surface. When the discharge cycles reached 400, silicon pits emerged closer to the gate position.
Conclusions
The experimental results successfully validated the model's predictive accuracy regarding the failure mechanisms of electrical erosion. This proposed model provides reliable technical support for the quantitative assessment of pulse thyristor electrical erosion failures.
- pulse thyristor /
- electrical erosion /
- carrier diffusion process /
- electrothermal characterization model /
- accelerated aging test

HTML全文

图 1 脉冲晶闸管微观接触界面电热特性表征模型建模思路

Figure 1. Approach for electrothermal characterization model for the micro-contact interface of pulse thyristors

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图 2 脉冲晶闸管实物及压力分布仿真模型

Figure 2. Pulse thyristor physical model and pressure distribution simulation model

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图 3 接触面及单个接触斑点示意图

Figure 3. Schematic diagram of the contact interface and a single contact spot

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图 5 接触斑点传热模型

Figure 5. Contact spot heat transfer model

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图 6 脉冲晶闸管结构图

Figure 6. Schematic structure of pulse thyristor

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图 7 建立的晶闸管半导体器件模型

Figure 7. The established thyristor semiconductor physical model

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图 8 阻断特性验证

Figure 8. Verification of blocking characteristics

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图 9 压力分布仿真结果

Figure 9. Pressure distribution simulation results

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图 4 接触斑点参数计算流程

Figure 4. Calculation process for contact spot parameters

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图 10 场-路耦合仿真电路及结果

Figure 10. Field-circuit coupling simulation circuit and results

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图 11 接触斑点热特性仿真结果

Figure 11. Simulation results of the thermal characteristics of contact spots

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图 12 试验回路及结果

Figure 12. Experimental circuit and results

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表 1 压力分布模型各组件材料

Table 1. Materials for each component of the pressure distribution model

No.	name	materials
1	gasket	304 stainless steel
2	clamping plate	7075 aluminum alloy
3	shim	45 steel
4	simplified assembly	copper
5	pulse thyristor	Silicon, molybdenum, copper

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表 2 部分技术参数

Table 2. Partial technical parameters

repetitive peak off-state voltage V_DRM/V	critical rate of rise of off-state voltage (dv/dt)/(V·μs⁻¹)	gate trigger current I_GT/mA
5600～6500	2000	40

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表 3 接触面材料物理参数

Table 3. Physical parameters of the contact surface material

material	Poisson’s ratio	elastic modulus/ GPa	resistivity/ (Ω·m)	specific heat capacity/ (J·kg⁻³·K⁻³)	density/(kg·m⁻³)	melting point/℃
aluminum	0.33	71.7	2.7×10⁻⁹	900	2690	660
silicon	0.28	190	1.9×10⁻³	700	2329	1410
molybdenum	0.32	320	5.2×10⁻⁹	242.8	10200	2620

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表 4 接触斑点尺寸参数

Table 4. Contact spot size parameter

contact spot number	pressure/(N·m⁻²)	base radius of the micro-unit/μm	a/μm	d/μm
#1	2.2×10⁶	136.8	2.5	1.41
#2	8.3×10⁶	87.1	3.0	1.06
#3	4.5×10⁶	105.1	2.7	1.22
#4	2.5×10⁶	133.2	2.6	1.38

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