纳秒上升沿同轴型固态Marx发生器的研究与设计

王永刚; 庞博宇; 李孜; 姜松

doi:10.11884/HPLPB202638.260001

纳秒上升沿同轴型固态Marx发生器的研究与设计

doi: 10.11884/HPLPB202638.260001

上海理工大学机械工程学院，上海 210093

基金项目: 国家自然科学基金项目(12305282)

详细信息

作者简介:
王永刚，fduwangyg@163.com

中图分类号: TN78;TN386.1
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- 文章访问数: 21
- HTML全文浏览量: 9
- PDF下载量: 5
- 被引次数: 0
出版历程
- 收稿日期: 2026-01-04
- 修回日期: 2026-03-20
- 录用日期: 2026-03-17
- 网络出版日期: 2026-04-18

Design of a coaxial fast rising edge solid-state Marx generator

英文作者,

英文单位

摘要

摘要: 为满足纳秒级快前沿脉冲需求，针对传统固态Marx发生器性能不足的问题，通过在LTspice中对固态Marx发生器电路中各项参数进行分析仿真，确定各项寄生参数对电路上升沿的影响，选用低寄生电感与寄生电容并带有开尔文源极的TO-263-7封装的半导体开关，同时采用单级双路对称并联开关实现均流设计优化了输出脉冲的上升时间，并使用同轴输出结构优化波形的同时便于级联。搭建了一台15级同轴型固态Marx样机，通过对200 Ω负载在10 kV电压下进行实验输出，获得了电流0～50 A、上升时间低于8 ns、脉宽200 ns～5 μs，频率0～10 kHz可调的快前沿高压脉冲，实验结果表明，所设计的装置在上升时间、脉冲幅值和重复频率等关键指标上表现良好，具有较高的综合性能。
- 固态Marx发生器 /
- 快上升沿 /
- 寄生参数 /
- 同轴线 /
- 纳秒脉冲
Abstract: Background
With the growing demand for fast-rising high-voltage pulses in industrial, medical, and plasma-related applications, solid-state Marx generators are increasingly used as pulse sources. However, the limited switching performance of semiconductor devices and constraints of circuit topology pose significant challenges for the design of solid-state Marx generators capable of producing very steep rising time.
Purpose
This study investigates the factors that determine the rise time of solid-state Marx generators and, on this basis, develops a generator that meets the performance requirements for fast-rising pulses.
Methods
A discharge-circuit model of a semiconductor-switched solid-state Marx generator was established, and simulations of parasitic elements were carried out in LTspice to identify their influence on the pulse rise time. In addition, the characteristic impedance of a coaxial output structure was incorporated into the simulations. Guided by these results, a solid-state Marx generator using dual parallel switching paths and a coaxial output structure was designed.
Results
Simulation results indicate that the series parasitic inductance of the circuit, the gate-drive resistance, and the Miller capacitance of the switches have the greatest impact on the rise time. By selecting appropriate MOSFETs and choosing a coaxial inner conductor with a characteristic impedance of 177.4 Ω for a 200 Ω load, a coaxial solid-state Marx generator was realized that delivers 10 kV/50 A pulses with a measured rise time of 7.6 ns.
Conclusions
Based on this analysis and design, a high-performance high-voltage pulse generator has been developed. The results provide a useful reference for further shortening the rise time of solid-state Marx generators, broadening their application range, and promoting their use as alternatives to conventional gas-switch Marx generators.
- solid-state marx generator /
- fast rising time /
- parasitic parameters /
- coaxial line /
- nanosecond pulse

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图 1 固态Marx放电回路等效模型

Figure 1. Equivalent model of solid-state Marx discharge circuit

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图 2 影响上升沿较大的寄生参数

Figure 2. Parasitic parameters significantly affecting the rising edge

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图 3 带有开尔文源极的MOSFET的影响

Figure 3. Influence of MOSFET with Kelvin Source

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图 4 主电路及辅助电路拓扑

Figure 4. Main circuit and auxiliary circuit topology

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图 5 驱动电路原理图

Figure 5. Schematic diagram of the driver circuit

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图 6 同轴结构输出示意图

Figure 6. Output of coaxial structure

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图 7 放电回路等效阻抗

Figure 7. Equivalent impedance of discharge circuit

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图 8 开关上升时间不同时，阻抗不匹配对波形的影响

Figure 8. Impact of impedance mismatch on waveforms under varying switching rise times

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图 9 不同$ {Z}_{0} $的输出仿真

Figure 9. Output Simulation for Different $ {Z}_{0} $

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图 10 单级电路板示意图

Figure 10. Single-stage PCB schematic diagram

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图 11 电路级联结构示意图

Figure 11. Circuit Cascade Structure

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图 12 15级Marx级联实物图

Figure 12. Module of 15-stage Marx cascade

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图 13 实验平台

Figure 13. Experimental platform

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图 14 单级Marx输出波形

Figure 14. Single-stage Marx output waveform

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图 15 有无内导体输出对比

Figure 15. Comparison of output with internal conductor added

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图 16 加装内导体输出上升沿对比

Figure 16. Comparison of rising edge of output with internal conductor added

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图 17 5 kΩ负载下10 kHz频率输出

Figure 17. Output at 10 kHz frequency under 5 kΩ load

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图 18 2 kΩ负载下放电脉宽调整

Figure 18. Adjustment of discharge pulse width under 2 kΩ load

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表 1 MOSFET参数对比

Table 1. Comparison of MOSFET parameters

MOSFET model	manufacturing Process	V_DSmax/V	I_D(pulse)/A	Qg/nC	package
C2M0080120D	SiC	1200	80	71	TO-247-3
C2M0045170P	SiC	1700	160	204	TO-247-4
IMBG120R140M1H	SiC	1200	47	13.4	TO-263-7
1Q12160D7Z	SiC	1200	47.5	43	TO-263-7
GS66508B	GaN	650	60	6.1	DFN-4

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参考文献(22)

[1]	曹鹤飞, 孙永卫, 原青云, 等. 航天器背面接地介质材料等离子体充电研究[J]. 强激光与粒子束, 2015, 27: 103204 doi: 10.11884/HPLPB201527.103204 Cao Hefei, Sun Yongwei, Yuan Qingyun, et al. Research on surface charging of back grounded dielectric material of spacecraft[J]. High Power Laser and Particle Beams, 2015, 27: 103204 doi: 10.11884/HPLPB201527.103204
[2]	岑超, 陈新华, 郑树森. 纳秒脉冲电场肿瘤电消融的分子生物学机制[J]. 浙江大学学报(医学版), 2015, 44(6): 678-683 Cen Chao, Chen Xinhua, Zheng Shusen. Mechanism of ablation with nanosecond pulsed electric field[J]. Journal of Zhejiang University (Medical Sciences), 2015, 44(6): 678-683
[3]	吴启翔, 陈永刚, 龚立娇, 等. 纳秒脉冲电场肿瘤消融关键技术研究综述[J]. 中国医疗设备, 2023, 38(5): 36-43 doi: 10.3969/j.issn.1674-1633.2023.05.007 Wu Qixiang, Chen Yonggang, Gong Lijiao, et al. Review of key techniques for nanosecond pulsed electric field of tumor ablation[J]. China Medical Devices, 2023, 38(5): 36-43 doi: 10.3969/j.issn.1674-1633.2023.05.007
[4]	江伟华. 高重复频率脉冲功率技术及其应用: (6)代表性的应用[J]. 强激光与粒子束, 2014, 26: 030201 doi: 10.3788/HPLPB20142603.30201 Jiang Weihua. Repetition rate pulsed power technology and its applications: (VI) typical applications[J]. High Power Laser and Particle Beams, 2014, 26: 030201 doi: 10.3788/HPLPB20142603.30201
[5]	王芝, 韩若愚, 李显东, 等. 水中针-板结构小能量脉冲火花放电特性[J]. 强激光与粒子束, 2022, 34: 095006 doi: 10.11884/HPLPB202234.220022 Wang Zhi, Han Ruoyu, Li Xiandong, et al. Low-energy pulsed spark discharge characteristics of pin-plate structure in water[J]. High Power Laser and Particle Beams, 2022, 34: 095006 doi: 10.11884/HPLPB202234.220022
[6]	孙瑞泽, 陈万军, 刘超, 等. 压控型脉冲功率半导体器件技术及应用[J]. 强激光与粒子束, 2024, 36: 095001 doi: 10.11884/HPLPB202436.240120 Sun Ruize, Chen Wanjun, Liu Chao, et al. Technology and application of the voltage-controlled pulse power semiconductor devices[J]. High Power Laser and Particle Beams, 2024, 36: 095001 doi: 10.11884/HPLPB202436.240120
[7]	马振宏, 刘振, 殷胜勇, 等. 高压纳秒脉冲电场消融黑色素瘤细胞实验研究[J]. 浙江大学学报(工学版), 2021, 55(6): 1168-1174,1198 doi: 10.3785/j.issn.1008-973X.2021.06.018 Ma Zhenhong, Liu Zhen, Yin Shengyong, et al. Experimental study on melanoma cell ablation by high-voltage nanosecond pulsed electric field[J]. Journal of Zhejiang University (Engineering Science), 2021, 55(6): 1168-1174,1198 doi: 10.3785/j.issn.1008-973X.2021.06.018
[8]	姜慧, 邵涛, 车学科, 等. 纳秒脉冲表面放电等离子体影响因素的实验研究[J]. 高电压技术, 2012, 38(7): 1704-1710 Jiang Hui, Shao Tao, Che Xueke, et al. Experimental study on the factors influencing nanosecond-pulsed surface discharge plasma[J]. High Voltage Engineering, 2012, 38(7): 1704-1710
[9]	仇聪颖, 管显涛, 刘振, 等. 纳秒脉冲放电处理有机染料废水的实验研究[J]. 强激光与粒子束, 2020, 32: 025010 doi: 10.11884/HPLPB202032.190390 Qiu Congying, Guan Xiantao, Liu Zhen, et al. Degradation of organic dyes by nanosecond pulsed discharge plasma[J]. High Power Laser and Particle Beams, 2020, 32: 025010 doi: 10.11884/HPLPB202032.190390
[10]	薛浩睿, 高文浩, 袁琪, 等. 纳秒脉冲参数对针-水阴极放电等离子体的影响[J]. 高电压技术, 2025, 51(12): 6094-6103 doi: 10.13336/j.1003-6520.hve.20241924 Xue Haorui, Gao Wenhao, Yuan Qi, et al. Effect of nanosecond pulse parameters on needle water cathode discharge plasma[J]. High Voltage Engineering, 2025, 51(12): 6094-6103 doi: 10.13336/j.1003-6520.hve.20241924
[11]	王永刚, 陶正强, 王琦, 等. 模块化全固态波形可调冲击电压发生器[J]. 强激光与粒子束, 2025, 37: 085001 doi: 10.11884/HPLPB202537.250021 Wang Yonggang, Tao Zhengqiang, Wang Qi, et al. Modular all-solid-state waveform-adjustable impulse voltage apparatus[J]. High Power Laser and Particle Beams, 2025, 37: 085001 doi: 10.11884/HPLPB202537.250021
[12]	徐乐, 江伟华. 基于雪崩三极管的快前沿脉冲功率源研究[J]. 强激光与粒子束, 2016, 28: 015001 doi: 10.11884/HPLPB201628.015001 Xu Le, Jiang Weihua. Study of fast rising pulsed power generator based on avalanche transistors[J]. High Power Laser and Particle Beams, 2016, 28: 015001 doi: 10.11884/HPLPB201628.015001
[13]	赵政, 钟旭, 李征, 等. 基于雪崩三极管的高重频高压纳秒脉冲产生方法综述[J]. 电工技术学报, 2017, 32(8): 33-47,54 Zhao Zheng, Zhong Xu, Li Zheng, et al. Review on the methods of generating high-repetitive-frequency high-voltage nanosecond pulses based on avalanche transistors[J]. Transactions of China Electrotechnical Society, 2017, 32(8): 33-47,54
[14]	张萌. 基于Marx电路的亚纳秒级脉冲源研制[D]. 成都: 电子科技大学, 2020: 21-25 Zhang Meng. Development of sub-nanosecond pulse source based on Marx circuit[D]. Chengdu: University of Electronic Science and Technology, 2020: 21-25
[15]	李东升, 李孜, 王永刚, 等. 具有快前沿的固态Marx电源的研究[J]. 强激光与粒子束, 2024, 36: 025003 Li Dongsheng, Li Zi, Wang Yonggang, et al. Research on solid state Marx power supply with fast front[J]. High Power Laser and Particle Beams, 2024, 36: 025003
[16]	王亿明, 王凌云, 张东东, 等. 具有快前沿的10 kV纳秒级脉冲电源的研制[J]. 强激光与粒子束, 2025, 37: 035001 doi: 10.11884/HPLPB202537.240406 Wang Yiming, Wang Lingyun, Zhang Dongdong, et al. Development of 10 kV nanosecond pulse power supply with fast leading edge[J]. High Power Laser and Particle Beams, 2025, 37: 035001 doi: 10.11884/HPLPB202537.240406
[17]	Bae J S, Kim T H, Son S H, et al. Compact solid-state Marx modulator with fast switching for nanosecond pulse[J]. IEEE Transactions on Power Electronics, 2022, 37(8): 9406-9414. doi: 10.1109/TPEL.2022.3156586
[18]	Huiskamp T, van Oorschot J J. Fast pulsed power generation with a solid-state impedance-matched Marx generator: concept, design, and first implementation[J]. IEEE Transactions on Plasma Science, 2019, 47(9): 4350-4360. doi: 10.1109/TPS.2019.2934642
[19]	van Oorschot J J, Huiskamp T. Fast and flexible, arbitrary waveform, 20-kV, solid-state, impedance-matched Marx generator[J]. IEEE Transactions on Plasma Science, 2023, 51(2): 560-571. doi: 10.1109/TPS.2023.3235418
[20]	Mesyats G A. Pulsed power[M]. Boston, MA: Springer, 2005: 215-218.
[21]	Chen H Y, Conn A T. A stretchable inductor with integrated strain sensing and wireless signal transfer[J]. IEEE Sensors Journal, 2020, 20(13): 7384-7391. doi: 10.1109/JSEN.2020.2979076
[22]	Lemmon A, Banerjee S, Matocha K, et al. Analysis of packaging impedance on performance of SiC MOSFETs[C]//PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. 2016: 1-8.