具有负压关断的MOSFET栅极快速驱动电路设计

Design of MOSFET gate driver circuit with negative voltage stability

  • 摘要: 设计了一款用于全固态Marx发生器的半导体开关驱动电路。该驱动电路输出侧采用储能电容与P-N双MOSFET管结构,可完成对固态Marx脉冲发生器功率回路开关管快速同步的导通关断控制,并具有死区时间调节与负压关断功能。此外,该驱动电路配合串芯磁环二次侧反向接线方案,可实现用同一信号对功率回路充、放电两路开关管的控制。实验证明,采用该款驱动电路的半桥型全固态Marx脉冲发生器可稳定输出幅值24 kV的脉冲方波,输出脉宽可在300 ns~10 μs之间自由调节,上升沿和下降沿均在40 ns以内。

     

    Abstract: A drive circuit for solid-state high-voltage Marx pulser generator is designed, and the output side of the drive circuit adopts energy storage capacitor and P-N-MOS structure, which can complete the synchronization, fast turning on and turnin off control of the power MOSFET in the power circuit of the solid-state pulse generator, and has the functions of dead-time adjustment and negative voltage bias. In addition, the drive circuit is combined with the scheme of reverse wiring on the secondary side of the core-piercing magnetic ring to realize the control of two power MOSFETs of charging and discharging in the power loop using the same signal. Experiments show that the solid-state Marx pulse generator using this drive circuit can output a pulse square wave with a stable amplitude of 24 kV, and the output pulse width can be freely adjusted between 300 ns and 10 μs, and the rising and falling edges are within 40 ns.

     

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