Abstract: Neutron diffraction technology has become a vital characterization tool in semiconductor material research due to its penetration capability, sensitivity to light elements, and dynamic detection advantages. By analyzing diffraction peak characteristics, this technique reveals lattice distortions, strain distributions, and defect evolution patterns, providing atomic-scale insights into material properties. It enables quantitative analysis of defects such as dislocation density and cation occupancy while investigating magnetic ordering and spin interaction mechanisms, supporting the development of novel electronic devices. Its in-situ testing capability allows real-time observation of defect reorganization during phase transitions and structural responses under external fields, overcoming the limitations of conventional methods, particularly in extreme-environment material studies. Current research focuses on establishing correlations between microstructural evolution and macroscopic performance, advancing in-situ dynamic testing methods for precise material behavior prediction. With upgrades to large-scale scientific facilities, neutron diffraction will play an increasingly significant role in both fundamental research and engineering applications of semiconductor materials, especially in harsh-environment material development. Future advancements will prioritize enhancing multiscale characterization capabilities and innovating in-situ experimental approaches, providing robust technical support for semiconductor materials science.